15G120VD Discrete IGBT ( High-Speed V series ) 15a 1200v

Rp18.000

Kondisi: Bekas
Min. Pemesanan: 1 Buah
Etalase: IGBT

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 155

Maximum collector-emitter voltage |Uce|, V: 1200

Collector-emitter saturation voltage |Ucesat|, V: 1.85

Maximum gate-emitter voltage |Ueg|, V: 20

Maximum collector current |Ic|, A: 15

Maximum junction temperature (Tj), C: 175

Rise time, nS: 20

Maximum collector capacity (Cc), pF: 58

Package: TO247

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