Details N-Channel Power MOSFET 12V to 25V, Infineon Infineon's range of discrete HEXFET power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Feature: Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.2 A Rds On - Drain-Source Resistance: 45 mOhms Vgs - Gate-Source Voltage: 12 V
Benefits: RoHS Compliant Industry-leading quality Fast Switching Low Profile (less than 1.1mm) SOT-23 Footprint