Spectacular speed everyday Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.
Cool power through your day Optimized efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73%, achieving the same power level and thermal control with less power consumption. Stay focused on work or play with no overheating or battery life worries.
Extra space. Extra speed. Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.
Specifications:
APPLICATION Client PCs
FORM FACTOR M.2 (2280)
INTERFACE PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0
DIMENSION (WxHxD) 80.15 x 22.15 x 2.38mm
WEIGHT Max 9.0g Weight
STORAGE MEMORY Samsung V-NAND TLC
CONTROLLER Samsung in-house Controller
CACHE MEMORY HMB(Host Memory Buffer)
TRIM SUPPORT Supported
S.M.A.R.T SUPPORT Supported
GC (GARBAGE COLLECTION) Auto Garbage Collection Algorithm
SEQUENTIAL READ 1TB: Up to 7,150 MB/s 2TB: Up to 7,250 MB/s 4TB: Up to 7,250 MB/s
SEQUENTIAL WRITE 1TB: Up to 6,300 MB/s 2TB: Up to 6,300 MB/s 4TB: Up to 6,300 MB/s
RANDOM READ (4KB, QD32) 1TB: Up to 850,000 IOPS 2TB: Up to 1,000,000 IOPS 4TB: Up to 1,050,000 IOPS
RANDOM WRITE (4KB, QD32) 1TB: Up to 1,350,000 IOPS 2TB: Up to 1,350,000 IOPS 4TB: Up to 1,400,000 IOPS
AVERAGE POWER CONSUMPTION (SYSTEM LEVEL) 1TB: Average: Read 4.3 W / Write 4.2 W 2TB: Average: Read 4.6 W / Write 4.2 W 4TB: Average: Read 5.5 W / Write 4.8 W