Product Category: Bipolar Transistors - BJT Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.14 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 270 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-92 DC Collector/Base Gain hfe Min: 60 DC Current Gain hFE Max: 1000 Maximum Dissipation: 450 mW Minimum Operating Temperature: - 55 C Packaging: Bulk Series: S9014