NCE4688 Datasheet Wuxi NCE Power Semiconductor NCE4688 RoHS Drain Source Voltage (Vdss) 60V Continuous Drain Current (Id) N 6.3A Continuous Drain Current (Id) P 6A Drain Source On Resistance (RDS(on)@Vgs,Id) 30mΩ@10V,6A Power Dissipation (Pd) 2W Gate Threshold Voltage (Vgs(th)@Id) 1.6V@250uA Reverse Transfer Capacitance (Crss@Vds) 25pF@15V Type 1PCSN-Channel&1PCSP-Channel Input Capacitance (Ciss@Vds) 500pF@15V Total Gate Charge (Qg@Vgs) 25nC@10V Operating Temperature -55℃~+150℃@(Tj)
Bk7 SVD1055SATR Datasheet Hangzhou Silan Microelectronics SVD1055SATR RoHS Drain Source Voltage (Vdss) 55V Continuous Drain Current (Id) N 17A Continuous Drain Current (Id) P 12A Drain Source On Resistance (RDS(on)@Vgs,Id) 30mΩ@10V,6A Power Dissipation (Pd) 2W Gate Threshold Voltage (Vgs(th)@Id) 1.6V@250uA Reverse Transfer Capacitance (Crss@Vds) 12.5pF@25V Type 1PCSN-Channel&1PCSP-Channel Input Capacitance (Ciss@Vds) 400pF@15V Total Gate Charge (Qg@Vgs) 11.4nC@10V Operating Temperature -55℃~+150℃@(Tj)