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Rp500
Transistor 2N2222 TO-92
Rp500
- Kondisi: Baru
- Min. Pemesanan: 1 Buah
- Etalase: Transistors
Description
Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 625mW, Vceo : 65V, ic : 100mA
Features
l Case: TO-92, Molded Plastic l Polarity: indicated as above.
Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Collector-Base Voltage BC547 BC548 Symbol Value 65 VCEO 30 80 VCBO 50 30 VEBO IC Pd
Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature
CollectorEmitter Breakdown Voltage (IC = 1.0 mA, = 0) CollectorBase Breakdown Voltage (IC = 100 µAdc) EmitterBase Breakdown Voltage (IE = 10 mA, = 0)
CollectorEmitter Saturation Voltage (IC = 100 mA, = 5.0 mA) BaseEmitter Saturation Voltage (IC = 100 mA, = 5.0 mA) BaseEmitter On Voltage (IC = 2.0 mA, VCE 5.0 V) (IC = 10 mA, VCE 5.0 V)
Output Capacitance (VCB = 1.0 MHz) Input Capacitance (VEB = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mA, VCE = 1.0 kHz)
7.0 C, CAPACITANCE (pF) 5.0 3.0 Cob 2.0 Cib f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 300 200 VCE = 25°C
Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 625mW, Vceo : 65V, ic : 100mA
Features
l Case: TO-92, Molded Plastic l Polarity: indicated as above.
Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Collector-Base Voltage BC547 BC548 Symbol Value 65 VCEO 30 80 VCBO 50 30 VEBO IC Pd
Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature
CollectorEmitter Breakdown Voltage (IC = 1.0 mA, = 0) CollectorBase Breakdown Voltage (IC = 100 µAdc) EmitterBase Breakdown Voltage (IE = 10 mA, = 0)
CollectorEmitter Saturation Voltage (IC = 100 mA, = 5.0 mA) BaseEmitter Saturation Voltage (IC = 100 mA, = 5.0 mA) BaseEmitter On Voltage (IC = 2.0 mA, VCE 5.0 V) (IC = 10 mA, VCE 5.0 V)
Output Capacitance (VCB = 1.0 MHz) Input Capacitance (VEB = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mA, VCE = 1.0 kHz)
7.0 C, CAPACITANCE (pF) 5.0 3.0 Cob 2.0 Cib f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 300 200 VCE = 25°C
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